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Pure Si at 300 K has equal electron (ne) and hole (n(h)) concentration of 2.xx10^(16) per m^(3). Doping by ind
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Suppose a pure Si crystal has 5 * 10^28 atoms/m^3 at room temperature. It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes. - Sahay Sir
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Raman spectra of a pure silicon substrate (thickness = 675 μm),... | Download Scientific Diagram
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