![Energy band gap, intrinsic carrier concentration, and Fermi level of CdTe bulk crystal between 304 and 1067K: Journal of Applied Physics: Vol 103, No 8 Energy band gap, intrinsic carrier concentration, and Fermi level of CdTe bulk crystal between 304 and 1067K: Journal of Applied Physics: Vol 103, No 8](https://aip.scitation.org/action/showOpenGraphArticleImage?doi=10.1063/1.2899087&id=images/medium/1.2899087.figures.f4.gif)
Energy band gap, intrinsic carrier concentration, and Fermi level of CdTe bulk crystal between 304 and 1067K: Journal of Applied Physics: Vol 103, No 8
Separation of electrical and optical energy gaps for constructing bipolar organic wide bandgap materials - Chemical Communications (RSC Publishing)
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